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2N5655 Datasheet(PDF) 2 Page - ON Semiconductor

Part # 2N5655
Description  Plastic NPN Silicon High?뭋oltage Power Transistor
PDF  5 Pages
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

2N5655 Datasheet(HTML) 2 Page - ON Semiconductor

  2N5655 Datasheet HTML 1Page - ON Semiconductor 2N5655 Datasheet HTML 2Page - ON Semiconductor 2N5655 Datasheet HTML 3Page - ON Semiconductor 2N5655 Datasheet HTML 4Page - ON Semiconductor 2N5655 Datasheet HTML 5Page - ON Semiconductor  
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2N5655, 2N5657
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) (Note 2)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage
2N5655
(IC = 100 mAdc (inductive), L = 50 mH)
2N5657
VCEO(sus)
250
350
−
−
Vdc
Collector−Emitter Breakdown Voltage
2N5655
(IC = 1.0 mAdc, IB = 0)
2N5657
V(BR)CEO
250
350
−
−
Vdc
Collector Cutoff Current
(VCE = 150 Vdc, IB = 0)
2N5655
(VCE = 250 Vdc, IB = 0)
2N5657
ICEO
−
−
0.1
0.1
mAdc
Collector Cutoff Current
(VCE = 250 Vdc, VEB(off) = 1.5 Vdc)
2N5655
(VCE = 350 Vdc, VEB(off) = 1.5 Vdc)
2N5657
(VCE = 150 Vdc, VEB(off) = 1.5 Vdc, TC = 100_C)
2N5655
(VCE = 250 Vdc, VEB(off) = 1.5 Vdc, TC = 100_C)
2N5657
ICEX
−
−
−
−
0.1
0.1
1.0
1.0
mAdc
Collector Cutoff Current
(VCB = 275 Vdc, IE = 0)
2N5655
(VCB = 375 Vdc, IE = 0)
2N5657
ICBO
−
−
10
10
mAdc
Emitter Cutoff Current (VEB = 6.0 Vdc, IC = 0)
IEBO
−
10
mAdc
ON CHARACTERISTICS
DC Current Gain (Note 3)
(IC = 50 mAdc, VCE = 10 Vdc)
(IC = 100 mAdc, VCE = 10 Vdc)
(IC = 250 mAdc, VCE = 10 Vdc)
(IC = 500 mAdc, VCE = 10 Vdc)
hFE
25
30
15
5.0
−
250
−
−
−
Collector−Emitter Saturation Voltage (Note 3)
(IC = 100 mAdc, IB = 10 mAdc)
(IC = 250 mAdc, IB = 25 mAdc)
(IC = 500 mAdc, IB = 100 mAdc)
VCE(sat)
−
−
−
1.0
2.5
10
Vdc
Base−Emitter Voltage (IC = 100 mAdc, VCE = 10 Vdc) (Note 3)
VBE
−
1.0
Vdc
DYNAMIC CHARACTERISTICS
Current−Gain − Bandwidth Product (IC = 50 mAdc, VCE = 10 Vdc, f = 10 MHz) (Note 4)
fT
10
−
MHz
Output Capacitance (VCB = 10 Vdc, IE = 0, f = 100 kHz)
Cob
−
25
pF
Small−Signal Current Gain (IC = 100 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
hfe
20
−
−
2. Indicates JEDEC registered data for 2N5655 Series.
3. Pulse Test: Pulse Width
v 300 ms, Duty Cycle v 2.0%.
4. fT is defined as the frequency at which |hfe| extrapolates to unity.
40
0
25
50
75
100
150
Figure 1. Power Derating
TC, CASE TEMPERATURE (°C)
30
20
10
125
Safe Area Limits are indicated by Figures 3 and 4. Both limits are applicable and must be observed.
Figure 2. Sustaining Voltage Test Circuit
50 mH
200
50 V
+
−
+
X
Y
TO SCOPE
Hg RELAY
300
1.0
6.0 V



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