2N5655 datasheet(3/5 Pages) ONSEMI

3 / 5 page

2N5655, 2N5657

http://onsemi.com

1.0

Figure 3. Active−Region Safe Operating Area

VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)

0.5

0.2

0.1

0.01

100

200

300 400

600

Second Breakdown Limit

Thermal Limit @ TC = 25°C

Bonding Wire Limit

Curves apply below rated VCEO

TJ = 150°C

1.0 ms

0.05

0.02

2N5655

2N5657

500

There are two limitations on the power handling ability of

a transistor: average junction temperature and second

breakdown. Safe operating area curves indicate IC − VCE

limits of the transistor that must be observed for reliable

operation; i.e., the transistor must not be subjected to greater

dissipation than the curves indicate.

The data of Figure 3 is based on TJ(pk) = 150_C; TC is

variable depending on conditions. Second breakdown pulse

limits are valid for duty cycles to 10% provided TJ(pk)

v 150_C. At high case temperatures, thermal limitations

will reduce the power that can be handled to values less than

the limitations imposed by second breakdown.

Figure 4. Current Gain

IC, COLLECTOR CURRENT (mA)

300

1.0

200

100

2.0

3.0

5.0

7.0

100

200

300

500

TJ = +150°C

+25

°C

−55

°C

VCE = 10 V

VCE = 2.0 V

+100

°C

1.0

IC, COLLECTOR CURRENT (mA)

0.8

0.6

0.4

100

200 300

500

VBE(sat) @ IC/IB = 10

0.2

VBE @ VCE = 10 V

VCE(sat) @ IC/IB = 10

IC/IB = 5.0

TJ = + 25°C

Figure 5. “On” Voltages

2N5655 Datasheet(PDF) 3 Page - ON Semiconductor

2N5655 Datasheet(HTML) 3 Page - ON Semiconductor

Html Pages

1 2 3 4 5

Datasheet Download

Link URL