ILQ32 datasheet(2/8 Pages) VISHAY

2 / 8 page

www.vishay.com

Document Number 83650

Rev. 1.5, 26-Oct-04

ILD32/ ILQ32

Vishay Semiconductors

Output

Coupler

1) between emitter and detector refer to standard climate 23 °C/50 %RH; DIN 50014

Electrical Characteristics

Tamb = 25 °C, unless otherwise specified

Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering

evaluation. Typical values are for information only and are not part of the testing requirements.

Input

Output

Parameter

Test condition

Symbol

Value

Unit

Collector-emitter breakdown

voltage

BVCEO

Collector (load) current

125

Power dissipation

Pdiss

150

Derate linearly from 25°C

2.0

mW/°C

Parameter

Test condition

Part

Symbol

Value

Unit

Isolation test voltage 1)

t = 1.0 sec.

VISO

5300

VRMS

Creepage

≥ 7mm

Clearance

≥ 7mm

Comparative tracking index per

DIN IEC 112/VDE303, part 1

≥ 175

Isolation resistance

VIO = 500 V, Tamb = 25 °C

RIO

1012

Ω

VIO = 500 V, Tamb = 100 °C

RIO

1011

Ω

Total dissipation

ILD32

Ptot

400

ILQ32

Ptot

500

Derate linearly from 25 °C

ILD32

5.33

mW/°C

ILQ32

6.67

mW/°C

Storage temperature

Tstg

- 55 to + 150

°C

Operating temperature

Tamb

- 55 to + 100

°C

Lead soldering time at 260 °C

sec.

Parameter

Test condition

Symbol

Min

Typ.

Max

Unit

Forward voltage

IF = 10 mA

1.25

1.5

Reverse current

VR = 3.0 V

0.1

100

Capacitance

VR = 0 V

Parameter

Test condition

Symbol

Min

Typ.

Max

Unit

Collector-emitter breakdown

voltage

IC = 100 µA, IF = 0

BVCEO

Breakdown voltage emitter-

collector

IE = 100 µABCECO

5.0

Collector-emitter leakage

current

VCE = 10 V, IF = 0

ICEO

1.0

100

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