MJE5852 datasheet(1/4 Pages) STMICROELECTRONICS

Part #	MJE5852

Description	HIGH VOLTAGE PNP POWER TRANSISTOR

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

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MJE5852

HIGH VOLTAGE PNP POWER TRANSISTOR

s

STMicroelectronics PREFERRED

SALESTYPE

s

PNP TRANSISTOR

s

HIGH VOLTAGE CAPABILITY

APPLICATIONS:

s

SWITCHING REGULATORS

s

MOTOR CONTROL

s

INVERTERS

DESCRIPTION

The

MJE5852

is manufactured using

High

Voltage PNP Multi-Epitaxial technology for high

switching speed and high voltage capability.

It is intended for use in high frequency and

efficiency converters, switching regulators and

motor control.

®

INTERNAL SCHEMATIC DIAGRAM

September 2003

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Value

Unit

VCES

Collector-Emitter Voltage (VBE = 0)

-450

V

VCEO

Collector-Emitter Voltage (IB = 0)

-400

V

VEBO

Emitter-Base Voltage (IC = 0)

-7

V

IC

Collector Current

-8

A

ICM

Collector Peak Current (tp < 5ms)

-16

A

IB

Base Current

-4

A

IBM

Base Peak Current (tp < 5ms)

-8

A

Ptot

Total Dissipation at Tc

≤ 25 oC

80

W

Tstg

Storage Temperature

-65 to 150

oC

Tj

Max. Operating Junction Temperature

150

oC

1

2

3

TO-220

1/4

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