MJE5852 datasheet(2/4 Pages) STMICROELECTRONICS

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THERMAL DATA

Rthj-case

Rthj-amb

Thermal Resistance Junction-case

Max

Thermal Resistance Junction-ambient

Max

1.56

62.5

oC/W

ELECTRICAL CHARACTERISTICS (Tcase = 25

oC unless otherwise specified)

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

ICES

Collector Cut-off

Current (VBE = -1.5V)

VCE = -450 V

-500

µA

IEBO

Emitter Cut-off Current

(IC = 0)

VEB = -6 V

-1

VCEO(sus)

∗ Collector-Emitter

Sustaining Voltage

(IB = 0)

IC = -10 mA

-400

VCE(sat)

∗ Collector-Emitter

Saturation Voltage

IC = -4 A

IB = -1 A

IC = -8 A

IB = -3 A

-2

-5

VBE(sat)

∗ Base-Emitter

Saturation Voltage

IC = -4 A

IB = -1 A

-1.5

hFE

∗

DC Current Gain

IC = -2 A

VCE = -5 V

IC = -5 A

VCE = -5 V

RESISTIVE LOAD

Storage Time

Fall Time

IC = -4 A

VCC = -250 V

IB1 = -IB2 = -1 A

tp = 40

µs

0.5

µs

∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %

For PNP type voltage and current values are negative.

MJE5852

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