LM385B datasheet(3/9 Pages) ONSEMI

3 / 9 page

LM285, LM385B

http://onsemi.com

ELECTRICAL CHARACTERISTICS (TA = 25°C, unless otherwise noted)

Characteristic

Symbol

LM285−1.2

LM385−1.2/LM385B−1.2

Unit

Min

Typ

Max

Min

Typ

Max

Reverse Breakdown Voltage Change with Current

IRmin v IR v 1.0 mA, TA = +25°C

TA = Tlow to Thigh (Note 2)

1.0 mA

v IR v 20 mA, TA = +25°C

TA = Tlow to Thigh (Note 2)

DV(BR)R

−

1.0

1.5

−

2.0

2.5

Reverse Dynamic Impedance

IR = 100 mA, TA = +25°C

−

0.6

−

0.6

−

Average Temperature Coefficient

mA v IR v 20 mA, TA = Tlow to Thigh (Note 2)

DV(BR)/DT

−

ppm/

°C

Wideband Noise (RMS)

IR = 100 mA, 10 Hz v f v 10 kHz

−

120

−

120

−

Long Term Stability

IR = 100 mA, TA = +25°C ± 0.1°C

−

ppm/kHR

2. Tlow

= −40

°C for LM285−1.2, LM285−2.5

Thigh = +85°C for LM285−1.2, LM285−2.5

Tlow

= 0

°C for LM385−1.2, LM385B−1.2, LM385−2.5, LM385B−2.5

Thigh =+70°C for LM385−1.2, LM385B−1.2, LM385−2.5, LM385B−2.5

LM385B Datasheet(PDF) 3 Page - ON Semiconductor

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