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Electrical ratings

Table 1. Absolute maximum ratings

Symbol

Parameter

Value

Unit

VGS

Gate-source voltage

±25

V

ID

Drain current (continuous) at TC = 25 °C

6

A

Drain current (continuous) at TC = 100 °C

4

A

IDM (1)

Drain current (pulsed)

13.4

A

PTOT

Total power dissipation at TC = 25 °C

76

W

dv/dt(2)

Peak diode recovery voltage slope

15

V/ns

dv/dt(3)

MOSFET dv/dt ruggedness

100

V/ns

Tj

Operating junction temperature range

-55 to 150

°C

Tstg

Storage temperature range

1. Pulse width limited by package.

2. ISD ≤ 6 A, di/dt ≤ 400 A/μs, VDD = 400 V, VDS(peak) < V(BR)DSS.

3. VDS ≤ 480 V.

Table 2. Thermal data

Symbol

Parameter

Value

Unit

Rthj-case

Thermal resistance junction-case

1.65

°C/W

Rthj-pcb (1)

Thermal resistance junction-pcb

50

°C/W

1. When mounted on an 1 inch² FR-4, 2 Oz copper board.

Table 3. Avalanche characteristics

Symbol

Parameter

Value

Unit

IAR

Avalanche current, repetitive or non-repetitive

(pulse width limited by Tjmax)

1.1

A

EAS

Single pulse avalanche energy

(starting Tj = 25 °C, ID = IAR, VDD = 50 V)

95

mJ

STD9N60M6

Electrical ratings

DS13558 - Rev 1

page 2/15