2

Electrical characteristics

(TC = 25 °C unless otherwise specified)

Table 4. On /off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source breakdown

voltage

VGS = 0 V, ID = 1 mA

600

V

IDSS

Zero gate voltage drain current

VGS = 0 V, VDS = 600 V

1

µA

VGS = 0 V, VDS = 600 V, TC=125 °C (1)

100

µA

IGSS

Gate-body leakage current

VDS = 0 V, VGS = ±25 V

±5

µA

VGS(th)

Gate threshold voltage

VDS = VGS, ID = 250 µA

3.25

4

4.75

V

RDS(on)

Static drain-source on-

resistance

VGS = 10 V, ID = 3 A

670

750

mΩ

1. Defined by design, not subject to production test.

Table 5. Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Ciss

Input capacitance

VDS = 100 V, f = 1 MHz, VGS = 0 V

-

273

-

pF

Coss

Output capacitance

-

24

-

pF

Crss

Reverse transfer capacitance

-

0.65

-

pF

Coss eq. (1)

Equivalent output capacitance

VDS= 0 to 480 V, VGS= 0 V

-

49

-

pF

RG

Intrinsic gate resistance

f = 1 MHz, ID=0 A

-

5.5

-

Ω

Qg

Total gate charge

VDD = 480 V, ID = 6 A, VGS = 0 to 10

V (see Figure 13. Test circuit for gate

charge behavior)

-

10.0

-

nC

Qgs

Gate-source charge

-

1.9

-

nC

Qgd

Gate-drain charge

-

5.4

-

nC

1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0

to 80% VDSS

Table 6. Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

td(on)

Turn-on delay time

VDD = 300 V, ID = 3 A, RG = 4.7 Ω,

VGS = 10 V (see Figure 12. Test circuit

for resistive load switching times and

Figure 17. Switching time waveform)

-

7

-

ns

tr

Rise time

-

4.1

-

ns

td(off)

Turn-off delay time

-

16.5

-

ns

tf

Fall time

-

8.8

-

ns

STD9N60M6

Electrical characteristics

DS13558 - Rev 1

page 3/15