UTC2SB688

PNP EPITAXIAL SILICON TRANSISTOR

2

www.unisonic.com

QW-R214-007,A

TYPICAL CHARACTERISTICS

0

240

20

0

AMBIENT TEMPERATURE, Ta (℃)

80

100

200

40

60

120

160

40

80

(1)

(2)

(3)

(4)

(5)

(1)

Ta=Tc

INFINITEHEATSINK

(2)

300×300×2mm A1

HEAT SINK

(3)

200×200×2mm A1

HEAT SINK

(4)

100×100×2mm A1

HEAT SINK

(5)

NO HEAT SINK

--12

-10

-14

-4

-6

0

-2

-8

-10

0-2

-4

-6

-8

COMMON EMITTER

-200mA

-50mA

0mA

-30

0m

A

-100mA

-0.1

-10

-100

-1

-300

SAFE OPERATING AREA

-1

-30

-3

-3

-30

-0.3

-0.5

-5

-10

(CONTINUOUS)

※

SINGLE NONREPETITIVE

CURVES MUST BE DERATED

LINEARLY WITH INCREASE

IN TEMPERATURE.

t=1ms※

t=10ms※

t=100ms※

t=500ms※

DC

OPE

RA

TIO

N

T

5℃

-10

-0.5

-1

-0.3

-0.01

-0.03

-0.1

-0.3

-0.05

-0.1

-0.03

-0.01

-3

-1

-3

-5

=1

00

℃

COMMON EMITTER

-0.01

30

10

300

1K

50

100

-0.03

-0.1

-0.3

-1

500

-3

-10

COMMON EMITTER

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exceed, even m om entarily, rated values (such as m axim um ratings, operating condition ranges, or

other param eters) listed in products specifications of any and all UTC products described or contained

herein. UTC products are not designed for use in life support appliances, dev ices or system s where

m alfunction of these products can be reasonably expected to result in personal injury. Reproduction in

whole or in part is prohibited without the prior written consent of the copyright owner. The inform ation

presented in this docum ent does not form part of any quotation or contract, is believ ed to be accurate

and reliable and m ay be changed without notice.