2SB688 datasheet(1/2 Pages) UTC

Part #	2SB688

Description	HIGH POWER AMPLIFIER APPLICATION

PDF	2 Pages

Scroll/Zoom	100%

Manufacturer	UTC [Unisonic Technologies]

Direct Link	http://www.utc-ic.com

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UTC2SB688

PNP EPITAXIAL SILICON TRANSISTOR

UTC UNISONIC TECHNOLOGIES CO., LTD.

1

www.unisonic.com

QW-R214-007,A

HIGH POWER AMPLIFIER APPLICATION

FEATURES

* Complementary to 2SD718.

* Recommended for 45 ~ 50W Audio Frequency Amplifier

Output Stage.

TO-3P

1

1: BASE 2: COLLECTOR 3: EMITTER

*Pb-free plating product number: 2SB688L

ABSOLUTE MAXIMUM RATINGS

(Ta=25℃)

PARAMETER

SYMBOL

RATINGS

UNIT

Collector-Base Voltage

VCBO

-120

V

Collector-Emitter Voltage

VCEO

-120

V

Emitter Base Voltage

VEBO

-5

V

Collector Current

IC

-10

A

Base Current

IB

-1

A

Collector Power Dissipation (TC=25℃)

PC

80

W

Junction Temperature

TJ

150

℃

Storage Temperature Range

TSTG

-40 ~ +150

℃

ELECTRICAL CHARACTERISTICS

(Ta=25℃)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNIT

Collector Cut-off Current

ICBO

VCB = -120V, IE = 0

-10

µA

Emitter Cut-off Current

IEBO

VEB = -5V, IC = 0

-10

µA

Collector-Emitter Breakdown Voltage

V(BR)CEO

IC = -50mA, IB= 0

-120

V

DC Current Gain

hFE

VCE = -5V, IC = -1A

55

160

Collector-Emitter Saturation Voltage

VCE(sat)

IC = -5A, IB = -0.5A

-2.5

V

Base-Emitter Voltage

VBE

VCE = -5A, IC= -5A

-1.5

V

Transition Frequency

fT

VCE = -5A, IC= -1A

10

MHz

Collector Output Capacitance

Cob

VCB = -10V, IE = 0, f=1MHz

280

pF

CLASSIFICATION OF hFE

RANK

R

O

RANGE

55 ~ 110

80 ~ 160

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