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2SC5765 Datasheet(PDF) 2 Page - Unisonic Technologies |
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2SC5765 Datasheet(HTML) 2 Page - Unisonic Technologies |
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2 / 3 page ![]() UTC2SC5765 NPN EPITAXIAL SILICON TRANSISTOR UTC UNISONIC TECHNOLOGIES CO. LTD 2 QW-R216-002,B ELECTRICAL CHARACTERISTICS CURVES 0.01 0.1 1 Collector Emitter Voltage VCE(V) 10 100 0.01 0.1 1 100 10 Ic max (Continous) Safe Operating Area 0.01 0.001 0.01 0.1 1 10 1 Common Emitter Ic/IB=50 0.1 Ta= -25℃ Ta= 25℃ Ta=100℃ 0.5 Ic-VCE 0 4 5 Collector Emitter Voltage VCE(V) 1.0 1 1.5 0 2.0 2 3 IB=0mA 1 2 4 6 8 10 20 30 60 Common Emitter Ta= 25℃ VCE(sat)-Ic Collector Current Ic (A) 0.01 10 100 1000 1 10 10000 Common Emitter VCE=1.5V 0.1 Ta= -25℃ Ta= 25℃ Ta=100℃ hFE-Ic Collector Current Ic (A) 0 0.2 3.0 0.4 2.0 0 4.0 5.0 Base Emitter Voltage VBE(V) 0.6 1.0 0.8 1.2 1.0 1.4 Common Emitter VCE=1.5V Ic-VBE Ta= -25℃ Ta= 25℃ Ta=100℃ *Single nonrepetitive pulse Ta= 25℃ Curves must be derated linearly with increase in temperature when a device is mounted on a Glass epoxy board (35mm*30mm*1mm) Ic max(Pulsed) 1ms* t=100ms* DC Operation VCEO max 400 Pc-Ta 0 0 600 Ambient Temperature Ta 50 100 (℃) 150 200 |
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