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2SA1201 Datasheet(PDF) 2 Page - Unisonic Technologies

Part # 2SA1201
Description  SILICON PNP EPITAXIAL TRANSISTOR
PDF  3 Pages
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Manufacturer  UTC [Unisonic Technologies]
Direct Link  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

2SA1201 Datasheet(HTML) 2 Page - Unisonic Technologies

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UTC2SA1201
PNP EPITAXIAL SILICON TRANSISTOR
UTC UNISONIC TECHNOLOGIES CO. LTD
2
QW-R208-024,A
CLASSIFICATION OF hFE
RANK
O
Y
RANGE
80 - 160
120 - 240
TYPICAL PERFORMANCE CHARACTERISTICS
I(tot)
mA
IC-VCE
0-4
0
-12
-8
-16
-200
-400
-600
-800
I(tot)
mA
-10
30
hFE-Ic
-3
-1000
10
Collector Current IC(A)
50
100
300
500
Collector Emitter Voltage VCE (V)
IB=-1mA
Common Emitter
Ta=25 ℃
-10
-7
-5
-4
-3
-2
-30
-100
-300
1000
Common Emitter
VCE= -5V
Ta=100℃
-25℃
25℃
I(tot)
mA
-10
-0.03
hFE-Ic
-3
-1000
-0.01
Collector Current IC(A)
-0.05
-0.1
-0.3
-30
-100
-300
-0.5
Common Emitter
Ic/IB=10
Ta=100℃
-25℃
25℃
I(tot)
mA
IC-VBE
0-0.2
0
-0.6
-0.4
-0.8
-0.2
-0.4
-0.6
-0.8
Base Emitter Voltage VBE (V)
-1.0 -1.2
Common Emitter
VCE= -5V
Ta=100℃
25℃
-25℃
I(tot)
mA
20
Pc-Ta
040
0
100
60
140 160
0.2
0.6
0.8
1.0
1. Mounted on Ceramic
Substrate (250mm2*0.8t)
2. No heat sink
80
0.4
Ambient Temperature Ta(℃)
120
1.2
1
2
-30
Safe Operation Area
-3
-10
-1
-10
-5
-50
-100
Collector Emitter Voltage VCE (V)
-300
-500
-300
-3
-1
-0.3
-30
-100
-1000
-3000
Ic max.(pulsed)*
Ic max.(continuous)*
1ms*
10ms*
100ms*
DC OPERATION
Ta=25℃
*Single nonrepetitive pulse
Ta=25℃
Curves must be derated
linearly with increase
in temperature
Test without a substrate VCEO MAX



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