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2SA1201 Datasheet(PDF) 1 Page - Unisonic Technologies |
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2SA1201 Datasheet(HTML) 1 Page - Unisonic Technologies |
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1 / 3 page  UTC2SA1201 PNP EPITAXIAL SILICON TRANSISTOR UTC UNISONIC TECHNOLOGIES CO. LTD 1 QW-R208-024,A SILICON PNP EPITAXIAL TRANSISTOR DESCRIPTION The UTC 2SA1201 is designed for power amplifier and voltage amplifier applications. FEATURES *High voltage: VCEO= -120V *High transition frequency: fT=120MHz(typ.) *Pc=1 to 2 W(mounted on ceramic substrate) SOT-89 1 1:EMITTER 2:COLLECTOR 3:BASE ABSOLUTE MAXIMUM RATINGS (Ta=25°C) PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO -120 V Collector-Emitter Voltage VCEO -120 V Emitter-Base Voltage VEBO -5 V Collector Current Ic -800 mA Base Current IB -160 mA PC 500 mW Collector Power Dissipation PC* 1000 mW Junction Temperature Tj 150 °C Storage Temperature TSTG -55 ~ +150 °C * : Mounted on cermic substrate( 250mm2 × 0.8t ) ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT Collector to emitter breakdown voltage V(BR)CEO Ic= -10mA, IB=0 -120 V Emitter to Base breakdown voltage V(BR)EBO IE= -1mA, IC=0 -5 V Collector cut-off current ICBO VCB= -120V, IE=0 -0.1 µA Emitter cut-off current IEBO VEB= -5V, IC=0 -0.1 µA DC Current Gain hFE VCE= -5V, IC= -100mA 80 240 Collector to emitter saturation voltage VCE(sat) Ic= -500mA, IB= -50mA -1.0 V Base to emitter voltage VBE VCE= -5V, IC= -100mA -1.0 V Transition frequency fT VCE= -5V, Ic= -100mA 120 MHz Collector output capacitance Cob VCB= -10V, IE=0, f=1MHz 30 pF |
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