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2SB647 Datasheet(PDF) 2 Page - Unisonic Technologies |
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2SB647 Datasheet(HTML) 2 Page - Unisonic Technologies |
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2 / 3 page ![]() UTC 2SB647 PNP EPITAXIAL SILICON TRANSISTOR UTC UNISONIC TECHNOLOGIES CO. LTD 2 QW-R211-010,A CLASSIFICATION OF hFE1 RANK B C D RANGE 60-120 100-200 160-320 TYPICAL PERFORMANCE CHARACTERISTICS 0 50 100 150 0.4 0.8 1.2 Maximum Collector Dissipation Curve Ambient Temperature Ta ( ℃) 0-2 -4 -6 -0.2 -0.4 -0.6 Typical Output Characteristics Collector to Emitter Voltage VCE (V) -0.8 -1.0 -8 -10 Pc =0.9W IB =0 -0.5m A -1 -2 -5 -10 -20 -30 -40 -80 -60 -100 -120 0 -0.2 -0.4 -0.6 -1 -2 -10 Typical Transfer Characteristics Base to Emitter Voltage VBE (V) -20 -50 -0.8 -1.0 -5 -100 -200 -500 VCE =-5V PULSE Ta=25 ℃ Ta=75 ℃ Ta= -25 ℃ 0 -3 -10 -30 -1 100 200 DC Current Transfer Ratio vs.Collector Current Collector Current Ic (mA) 300 -100 -300 400 500 600 VCE =-5V PULSE Ta=75 ℃ Ta=25 ℃ Ta=-25 ℃ -1000 |
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