2SB647 datasheet(1/3 Pages) UTC

Part #	2SB647

Description	SILICON PNP EPITAXIAL

PDF	3 Pages

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Manufacturer	UTC [Unisonic Technologies]

Direct Link	http://www.utc-ic.com

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UTC 2SB647

PNP EPITAXIAL SILICON TRANSISTOR

UTC UNISONIC TECHNOLOGIES CO. LTD

1

QW-R211-010,A

SILICON PNP EPITAXIAL

APPLICATION

* Low frequency power amplifier

TO-92NL

1

1:EMITTER 2:COLLECTOR 3:BASE

ABSOLUTE MAXIMUM RATINGS (Ta=25°C, unless otherwise specified)

PARAMETER

SYMBOL

VALUE

UNIT

Collector-Base Voltage

VCBO

-120

V

Collector-Emitter Voltage

VCEO

-80

V

Emitter-Base Voltage

VEBO

-5

V

Collector Current

Ic

-1

A

Collector Peak Current

Ic(peak)

-2

A

Collector Power Dissipation

Pc

0.9

W

Junction Temperature

Tj

150

°C

Storage Temperature

Tstg

-55 ~ +150

°C

ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX UNIT

Collector-Base Breakdown Voltage

V(BR)CBO

Ic= -10µA,IE =0

-120

V

Collector-Emitter Breakdown Voltage

V(BR)CEO

Ic= -1mA,RBE =∞

-80

V

Emitter-Base Breakdown Voltage

V(BR)EBO

IE= -10

µA,IC=0

-5

V

Collector Cut-Off Current

ICBO

VCB= -100V,IE=0

-10

µA

hFE1

VCE= -5V, Ic= -150mA(note)

60

320

DC Current Transfer Ratio

hFE2

VCE= -5V, Ic= -500mA(note)

30

Collector-Emitter Saturation Voltage

VCE(sat)

Ic= -500mA,IB= -50 mA(note)

-1

V

Base-Emitter Saturation Voltage

VBE

VCE= -5V,Ic= -150mA(note)

-1.5

V

Gain Bandwidth Product

fT

VCE= -5V,Ic= -150mA

140

MHz

Collector Output Capacitance

Cob

VCB= -10V,IE=0,f=1MHz

20

pF

Note: Pulse test

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