2SC2235 datasheet(1/4 Pages) UTC

Part #	2SC2235

Description	AUDIO POWER AMPLIFIER APPLICATIONS DRIVER STAGE AMPLIFIER APPLICATIONS

PDF	4 Pages

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Manufacturer	UTC [Unisonic Technologies]

Direct Link	http://www.utc-ic.com

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UTC2SC2235

NPN EPITAXIAL SILICON TRANSISTOR

UTC UNISONIC TECHNOLOGIES CO. LTD

1

QW-R211-012,A

AUDIO POWER AMPLIFIER

APPLICATIONS

DRIVER STAGE AMPLIFIER

APPLICATIONS

FEATURES

*Complimentary to 2SA965

TO-92NL

1

1:EMITTER 2:COLLECTOR 3. BASE

ABSOLUTE MAXIMUM RATINGS ( Ta=25°C ,unless otherwise specified )

PARAMETER

SYMBOL

RATING

UNIT

Collector-base Voltage

VCBO

120

V

Collector-emitter Voltage

VCEO

120

V

Emitter-base Voltage

VEBO

5

V

Collector Power Dissipation

Pc

900

mW

Collector Current

Ic

800

mA

Emitter Current

IE

-800

mA

Junction Temperature

TJ

150

°C

Storage Temperature Range

TSTG

-55 ~ +150

°C

ELECTRICAL CHARACTERISTICS(Ta=25°C,unless otherwise specified)

Parameter

Symbol

Test conditions

MIN

TYP

MAX

UNIT

Collector Cut-off Current

ICBO

VCB=120V,IE=0

100

nA

Emitter Cut-off Current

IEBO

VEB=5V,Ic=0

100

nA

Collector-Emitter Breakdown Voltage

VBR(CEO)

Ic=10mA,IB=0

120

V

Emitter-Base Breakdown Voltage

VBR(EBO)

IE=1 mA, Ic=0

5

V

DC Current Gain(note)

hFE

VCE=5V,Ic=100mA

80

240

Collector-Emitter Saturation Voltage

VCE(sat)

Ic=500mA,IB=50mA

1.0

V

Base-Emitter Voltage

VBE

VCE=5V,Ic=500mA

1.0

V

Transition Frequency

fT

VCE=5V,Ic=100mA

120

MHz

Collector Output capacitance

Cob

VCB=10V,IE=0,f=1MHz

30

pF

CLASSIFICATION OF hFE

RANK

Y

O

RANGE

120-240

80-160

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