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2SC3468 Datasheet(PDF) 2 Page - Unisonic Technologies |
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2SC3468 Datasheet(HTML) 2 Page - Unisonic Technologies |
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2 / 3 page ![]() UTC 2SC3468 NPN EPITAXIAL SILICON TRANSISTOR UTC UNISONIC TECHNOLOGIES CO., LTD. 2 www.unisonic.com.tw QW-R208-037,A CLASSIFICATION of hFE RANK C D E F RANGE 40 ~ 80 60 ~ 120 100 ~ 200 160 ~ 320 TYPICAL CHARACTERS -2 -4 -9 IC - VCE 0 -6 -12 -18 -7 0 Collector-to-Emitter Voltage, VCE (V) -1 -3 -5 -6 -8 -10 -2 -4 -8 -10 -14 -16 -20 120μA 100μA 80μA 60μA 40μA 20μA IB = 0 20 40 90 IC - VCE 0 3 6 9 70 0 Collector-to-Emitter Voltage, VCE (V) 10 30 50 60 80 100 1 2 4 5 7 8 10 60μA 50μA 40μA 30μA 20μA 10μA IB = 0 25 100 hFE - IC 10 5 2 7 5 Collector Curcuit, Ic (mA) 1.0 3 10 2 2 3 7 100 3 5 1000 fT - IC Ta = 75℃ VCE = 10V 25℃ -25℃ 77 2 5 37 25 100 5 Collector Curcuit, Ic (mA) 1.0 3 10 2 77 2 5 37 10 5 2 7 2 3 7 100 3 5 1000 VCE = 30V 25 100 Cob - VCB 5 2 7 2 5 Collector-to-Base Voltage, VCB (V) 1.0 3 10 2 1.0 3 10 5 3 f = 1MHz 77 2 5 37 7 25 100 Cre - VCB 5 2 7 2 5 Collector-to-Base Voltage, VCB (V) 1.0 3 10 2 1.0 3 10 5 3 f = 1MHz 77 2 5 37 7 |
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