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2SD965B Datasheet(PDF) 2 Page - Unisonic Technologies |
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2SD965B Datasheet(HTML) 2 Page - Unisonic Technologies |
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2 / 3 page ![]() UTC2SD965B NPN EPITAXIAL SILICON TRANSISTOR UTC UNISONIC TECHNOLOGIES CO. LTD 2 www.unisonic.com.tw QW-R201-078,B TYPICAL CHARACTERISTIC CURVES Fig.1 Static characteristics Collector-Emitter voltage ( V) 0 0.4 0.8 1.2 1.6 2.0 0 1.0 1.5 2.0 2.5 3.0 IB=0.5mA IB=1.0mA IB=1.5mA IB=2.0mA IB=2.5mA IB=3.0mA Fig.2 DC current Gain Ic,Collector current (mA) 10 2 10 1 10 0 10 3 10 4 10 3 10 2 10 1 10 -1 VCE=2V Fig.3 Base-Emitter on Voltage Ic,Collector current (mA) 10 4 10 3 10 2 10 1 10 0 10 1 10 2 10 3 10 4 Fig.4 Saturation voltage Fig.5 Current gain-bandwidth product Fig.6 Collector output Capacitance VCE(sat) VBE(sat) Ic=10*IB Ic,Collector current (mA) 10 0 10 1 10 2 10 3 10 0 10 1 10 2 VCE=6V Collector-Base voltage (V) 10 3 10 3 10 0 10 1 10 2 10 -1 10 0 10 1 10 2 f=1MHz IE=0 |
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