2SD965B datasheet(1/3 Pages) UTC

Part #	2SD965B

Description	LOW VOLTAGE HIGH CURRENT NPN TRANSISTOR

PDF	3 Pages

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Manufacturer	UTC [Unisonic Technologies]

Direct Link	http://www.utc-ic.com

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UTC2SD965B

NPN EPITAXIAL SILICON TRANSISTOR

UTC UNISONIC TECHNOLOGIES CO. LTD

1

www.unisonic.com.tw

QW-R201-078,B

LOW VOLTAGE HIGH CURRENT

NPN TRANSISTOR

FEATURES

* Collector current up to 5A

* 2SD965B : Collector-Emitter voltage up to 30 V

APPLICATIONS

* Audio amplifier

* Flash unit of camera

* Switching circuit

TO-92

1

1: EMITTER

2: COLLECTOR 3: BASE

*Pb-free plating product number: 2SD965BL

ABSOLUTE MAXIMUM RATINGS

( Ta=25

°C )

PARAMETER

SYMBOL

RATINGS

UNIT

Collector-base voltage

VCBO

40

V

Collector-emitter voltage

VCEO

30

V

Emitter-base voltage

VEBO

7

V

Collector dissipation(Ta=25

°C)

Pc

750

mW

Collector current

Ic

5

A

Junction Temperature

Tj

150

°C

Storage Temperature

TSTG

-65 ~ +150

°C

ELECTRICAL CHARACTERISTICS

(Ta=25

°C,unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNIT

Collector-base breakdown voltage

BVCBO

Ic=100

µA,IE=0

40

V

Collector-emitter breakdown

voltage

BVCEO

Ic=1mA,IB=0

30

V

Emitter-base breakdown voltage

BVEBO

IE=10

µA,Ic=0

7

V

Collector cut-off current

ICBO

VCB=30V,IE=0

200

nA

Emitter cut-off current

IEBO

VEB=7V,Ic=0

200

nA

DC current gain(note)

hFE 1

hFE 2

hFE 3

VCE=2V,Ic=1mA

VCE=2V,Ic=0.5A

VCE=2V,Ic=2A

230

150

200

800

Collector-emitter saturation voltage

VCE(sat) Ic=3A, IB= 0.1A

1

V

Current gain bandwidth product

fT

VCE=6V,Ic=50mA

150

MHz

Output capacitance

Cob

VCB=20V,IE=0, f=1MHz

50

pF

CLASSIFICATION OF hFE2

RANK

Q

R

S

RANGE

230-380

340-600

560-800

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