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BC807 Datasheet(PDF) 2 Page - Unisonic Technologies |
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BC807 Datasheet(HTML) 2 Page - Unisonic Technologies |
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2 / 4 page ![]() UTCBC807/BC808 PNP EPITAXIAL SILICON TRANSISTOR UTC UNISONIC TECHNOLOGIES CO. LTD 2 QW-R206-026,A PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT DC Current Gain hFE1 hFE2 Ic=-100mA, VCE=-1V Ic=-300mA, VCE=-1V 100 60 630 Collector-Emitter Saturation Voltage VCE(sat) Ic=-500mA, IB=-50mA -0.7 V Base-Emitter On Voltage VBE(on) Ic=-300mA, VCE=-1V -1.2 V Current Gain Bandwidth Product fT VCE=-5V, Ic=-10mA, f=50MHz 100 MHz Output Capacitance Cob VCB=-10V, f=1MHz 12 pF Classification of hFE RANK 16 25 40 hFE1 100-250 160-400 250-630 hFE2 60- 100- 170- Marking Code TYPE 807-16 807-25 807-40 808-16 808-25 808-40 MARK 9FA 9FB 9FC 9GA 9GB 9GC |
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