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BC807 Datasheet(PDF) 1 Page - Unisonic Technologies

Part # BC807
Description  SWITCHING AND AMPLIFIER APPLICATIONS
PDF  4 Pages
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Manufacturer  UTC [Unisonic Technologies]
Direct Link  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

BC807 Datasheet(HTML) 1 Page - Unisonic Technologies

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UTCBC807/BC808
PNP EPITAXIAL SILICON TRANSISTOR
UTC UNISONIC TECHNOLOGIES CO. LTD
1
QW-R206-026,A
SWITCHING AND AMPLIFIER
APPLICATIONS
FEATURES
*Suitable for AF-Driver stages and low power output
stages
*Complement to BC817 / BC818
SOT-23
1
2
3
1: EMITTER 2: BASE 3: COLLECTOR
ABSOLUTE MAXIMUM RATINGS (Ta=25°C, unless otherwise noted)
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Emitter Voltage
BC807
BC808
VCES
-50
-30
V
V
Collector-Emitter Voltage
BC807
BC808
VCE0
-45
-25
V
V
Emitter-Base Voltage
VEBO
-5
V
Collector Current (DC)
Ic
-800
mA
Collector Dissipation
Pc
-310
mW
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
-65 to +150
°C
ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNIT
Collector-Emitter Breakdown Voltage
BC807
BC808
BVCEO
Ic=-10mA, IB=0
-45
-25
V
V
Collector-Emitter Breakdown Voltage
BC807
BC808
BVCES
IC=-0.1mA, VBE=0
-50
-30
V
V
Emitter-Base Breakdown Voltage
BVEBO
IE=-0.1mA, Ic=0
-5
V
Collector Cut-off Current
ICES
VCE=-25V, VBE=0
-100
nA
Emitter Cut-off Current
IEBO
VEB=-4V, Ic=0
-100
nA


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