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GA50JT12 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited

Part # GA50JT12
Description  SiC N-Channel MOSFET
PDF  3 Pages
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Manufacturer  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

GA50JT12 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited

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GA50JT12
SiC N-Channel MOSFET
www.iscsemi.com
2023-9-26
2
ELECTRICAL CHARACTERISTICS (TC=25℃)
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
V(BR)DSS
Drain-Source Breakdown Voltage
VGS= 0V; ID=0.1mA
1200
--
--
V
VGS(th)
Gate Threshold Voltage
VDS = 10V, ID = 23mA
1.9
2.6
4.0
V
VGS(th)
Gate Threshold Voltage
VDS = 10V, ID = 23mA;TJ=175℃
--
1.8
--
V
RDS(ON)
Drain-Source On-stage Resistance
VGS=18V; ID= 75A
--
16
22.3
mΩ
VGS= 18V; ID= 75A;TJ=175°C
--
28
--
IGSS
Gate Source Leakage Current
VGS= -8/+22V; VDS= 0V
--
--
250
nA
IDSS
Zero Gate Voltage Drain Current
VDS = 1200V, VGS = 0V
--
--
100
μA
gfs
Transconductance
VDS = 20V, ID =75A
41.4
S
gfs
Transconductance
VDS =20V, ID =75A;TJ=175℃
36.5
RG
Gate resistance
VGS=25mV,f=1.0MHZ
--
1.5
--
Ω
Ciss
Input Capacitance
VGS = 0V,
VDS = 1000V,
f = 1.0MHz
--
4817
--
pF
Coss
Output Capacitance
--
207
--
Crss
Reverse Transfer Capacitance
--
45
--
Qg
Total Gate Charge
VDD=800V,
ID=30A,
VGS=-4 to +18V
--
66
--
nC
Qgs
Gate-Source Charge
--
48
--
Qgd
Gate-Drain Charge
--
269
--
td(on)
Turn-on Delay Time
VDD = 800 V, ID = 30 A,
RG = 2.5 Ω, VGS = -4 to 18 V
RL=20Ω
--
150
--
ns
tr
Turn-on Rise Time
--
38
--
td(off)
Turn-off Delay Time
--
108
--
tf
Turn-off Fall Time
--
35
--
EON
Turn-On Switching Energy
VDD = 800 V, ID = 30 A,
RG =2.5 Ω, VGS = -4V to 18 V
L=100uH
--
2.1
--
mJ
EOFF
Turn-Off Switching Energy
--
1.6
--



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