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GA50JT12 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

Part # GA50JT12
Description  SiC N-Channel MOSFET
PDF  3 Pages
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Manufacturer  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

GA50JT12 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited

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GA50JT12
SiC N-Channel MOSFET
www.iscsemi.com
2023-9-26
1
FEATURES
·
High Blocking Voltage with Low On-Resistance
·
RDS(ON)= 22.3mΩ@VGS=18V Tj=25℃
·
Low Capacitance
·
Avalanche Ruggedness
APPLICATIONS
·
Solar Inverters
·
Switch Mode Power Supplies
·
High Voltage DC-DC Converters
·
Battery Chargers
Absolute Maximum Ratings(TC=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage
1200
V
VGSS,OP
Recommend Gate Source Voltage
-4/+18
V
VGSS,MAX
Mavimum Gate Source
-8/+22
V
ID
Drain Current-Continuous
100
A
Drain Current-Continuous@Tc=145℃
50
A
IDM
Drain Current-Single Pluse
250
A
PD
Total Dissipation @TC=25℃
583
W
TJ
Max. Operating Junction Temperature
175
℃
Tstg
Storage Temperature
-55~175
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance, Junction to Case
0.26
℃
/W


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