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ML1225 Datasheet(PDF) 2 Page - Unisonic Technologies

Part # ML1225
Description  MEDIUM POWER LOW VOLTAGE TRANSISTOR
PDF  3 Pages
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Manufacturer  UTC [Unisonic Technologies]
Direct Link  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

ML1225 Datasheet(HTML) 2 Page - Unisonic Technologies

  ML1225 Datasheet HTML 1Page - Unisonic Technologies ML1225 Datasheet HTML 2Page - Unisonic Technologies ML1225 Datasheet HTML 3Page - Unisonic Technologies  
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XL/ML1225
SCR
UNISONIC TECHNOLOGIES CO., LTD
2
www.unisonic.com.tw
QW-R301-003,D
ABSOLUATE MAXIUM RATINGS (Ta= 25℃, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITION
RATINGS
UNIT
XL1225
400
Repetitive Peak
Off-State Voltage
ML1225
VDRM
TJ =40 ~ 125°C
RGK =1kΩ
300
V
On-State Current
IT(RMS)
Tc=40
°C
0.8
A
Average On-State Current
IT(AV)
Half Cycle=180,Tc=40
°C
0.5
A
Peak Reverse Gate Voltage
VGRM
IGR=10uA
1
V
Peak Gate Current
IGM
10us Max.
0.1
A
Gate Dissipation
PG(AV)
20ms Max.
150
mW
Operating Temperature
TJ
+125
°C
Storage Temperature
TSTG
-40 ~ +150
°C
Note 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. The device is guaranteed to meet performance specification within 0℃~70℃ operating temperature range
and assured by design from –20℃~85℃.
ELECTRICAL CHARACTERISTICS (Ta= 25℃, unless otherwise specified.)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNIT
Off State Leakage Current
IDRM
@VDRM(RGK=1KΩ), TJ =125°C
0.1
mA
Off State Leakage Current
IDRM
@VDRM(RGK=1KΩ), TJ =25°C
1.0
µA
On State Voltage
VT
AT IT=0.4A
AT IT=0.8A
1.
4
2.2
V
On State Threshold Voltage
VT(TO)
TJ =125°C
0.95
V
On State Slops Resistance
Rt
TJ =125°C
600
m
Gate Trigger Current
IGT
VD=7V
200
µA
Gate Trigger Voltage
VGT
VD=7V
0.8
V
Holding Current
IH
RGK=1KΩ
5
mA
Latching Current
IL
RGK=1KΩ
6
mA
Critical Rate of Voltage Rise
DV/DT
VD=0.67*VDRM(RGK=1KΩ),TJ =125℃
V/
µs
Critical Rate of Current Rise
DV/DT
IG=10mA, dIG/dt=0.1A/µs,TJ =125℃
A/
µs
Gate Controlled Delay Time
TGD
IG=10mA, dIG/dt=0.1A/µs
2.2
µs
Commutated Turn-off Time
TG
TJ =85°C, VD=0.67*VDRM
VR=35V, IT=IT(AV)
200
µs
CLASSIFICATION OF IGT
RANK
B
C
AA
AB
AC
AD
RANGE
50-100
µA
100-200
µA
8-15
µA
15-20
µA
20-25
µA
25-50
µA



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