BUX86P datasheet(2/6 Pages) PHILIPS

2 / 6 page

Philips Semiconductors

Product specification

Silicon Diffused Power Transistor

BUX86P

BUX87P

THERMAL RESISTANCES

SYMBOL

PARAMETER

CONDITIONS

TYP.

MAX.

UNIT

th j-mb

Junction to mounting base

K/W

th j-a

Junction to ambient

in free air

100

K/W

STATIC CHARACTERISTICS

mb = 25 ˚C unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

CES

BE = 0 V; VCE = VCESMmax

100

µA

CES

BE = 0 V; VCE = VCESMmax;

1.0

j = 125 ˚C

EBO

Emitter cut-off current

EB = 5 V; IC = 0 A

CEsat

Collector-emitter saturation voltages I

C = 0.1 A; IB = 10 mA

0.8

CEsat

C = 0.2 A; IB = 20 mA

BEsat

Base-emitter saturation voltage

C = 0.2 A; IB = 20 mA

DC current gain

C = 50 mA; VCE = 5 V

125

CEOsust

Collector-emitter sustaining voltage

C = 100 mA;

BUX86P

400

Boff = 0; L = 25 mH

BUX87P

450

DYNAMIC CHARACTERISTICS

mb = 25 ˚C unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

TYP.

MAX.

UNIT

Switching times (resistive load).

C = 0.2 A; IBon = 20 mA; -IBoff = 40 mA;

CC = 250 V

Turn-on time

0.25

0.5

µs

Turn-off storage time

3.5

µs

Turn-off fall time

0.28

µs

Turn-off fall time

mb = 95 ˚C

1.3

µs

November 1995

Rev 1.100

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