BUX86P datasheet(4/6 Pages) PHILIPS

4 / 6 page

Philips Semiconductors

Product specification

Silicon Diffused Power Transistor

BUX86P

BUX87P

Fig.7. Typical DC current gain.

FE = f(IC); parameter VCE.

Arrows indicate conditions protected by 100% test.

Fig.8. Typical DC current gain.

FE = f(IC); parameter VCE

Fig.9. Typical DC current gain.

FE = f(IC); parameter VCE

Fig.10. Forward bias safe operating area. T

mb = 25 ˚C

Region of permissible DC operation.

Extension for repetitive pulse operation.

NB:

Mounted with heatsink compound and

± 5 newton force on the centre of the

envelope.

0.001

0.01

0.1

100

1000

hFE

BUX86P

IC / A

Typical gain

Limit gain

VCE=5V

Tj=25 C

100

1000

0.001

0.01

0.1

= 0.01

tp =

1 ms

10 ms

IC / A

BUX87P

VCE / V

ICM max

IC max

BUX86P

0.001

0.01

0.1

100

1000

hFE

IC / A

Typical gain

Limit gain

VCE=5V

Tj=95 C

0.001

0.01

0.1

100

1000

Typical gain

Limit gain

VCE=5V

Tj= -40 C

hFE

BUX86P

IC / A

November 1995

Rev 1.100

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