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BY249 Datasheet(PDF) 3 Page - NXP Semiconductors |
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BY249 Datasheet(HTML) 3 Page - NXP Semiconductors |
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3 / 5 page ![]() Philips Semiconductors Product specification Rectifier diodes BY249 series general purpose Fig.1. Maximum forward dissipation P F = f(IF(AV)); square wave where I F(AV) =IF(RMS) x √D. Fig.2. Maximum forward dissipation P F = f(IF(AV)); sinusoidal current waveform where a = form factor = I F(RMS) / IF(AV). Fig.3. Maximum non-repetitive rms forward current. I F = f(tp); sinusoidal current waveform; Tj = 150˚C prior to surge with reapplied V RWM. Fig.4. Typical and maximum forward characteristic I F = f(VF); parameter Tj Fig.5. Transient thermal impedance Z th = f(tp) 0 2468 10 12 0 5 10 15 D = 1.0 0.5 0.2 0.1 BY249 IF(AV) / A PF / W Tmb(max) / C 150 140 130 120 Rs = 0.0200 Ohms Vo = 1.0120 V D = tp tp T T t I 1ms 10ms 0.1s 1s 10s tp / s IFS(RMS) / A BY229 80 70 60 50 40 30 20 10 0 IFSM 0 2 4 6 8 BY249 IF(AV) / A PF / W 15 10 5 0 a = 1.57 1.9 2.2 2.8 4 Tmb(max) / C 150 140 130 120 Vo = 1.012 V Rs = 0.02 Ohms 0 1 2 BY249 VF / V IF / A 30 20 10 0 0.5 1.5 typ max Tj = 100 C Tj = 25 C 1us 10us 100us 1ms 10ms 100ms 1s 10s 0.001 0.01 0.1 1 10 BY229 pulse width, tp (s) Transient thermal impedance, Zth j-mb (K/W) D = tp tp T T P t D September 1998 3 Rev 1.300 |
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