BYM359DX datasheet(1/7 Pages) PHILIPS

Part #	BYM359DX

Description	Dual diode fast, high-voltage

PDF	7 Pages

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Manufacturer	PHILIPS [NXP Semiconductors]

Direct Link	http://www.nxp.com

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1 / 7 page

Philips Semiconductors

Product specification

Dual diode

BYM359DX

fast, high-voltage

FEATURES

SYMBOL

QUICK REFERENCE DATA

• Low forward volt drop

DAMPER

MODULATOR

• Fast switching

• Soft recovery characteristic

V

R=1500 V

V

R=800 V

• High thermal cycling

performance

V

F ≤ 1.3 V

V

F ≤ 1.45 V

• Isolated mounting tab

I

F(RMS) =15.7 A

I

F(RMS) = 11 A

I

FSM ≤ 60 A

I

FSM ≤ 60 A

t

rr ≤ 300 ns

t

rr ≤ 145 ns

GENERAL DESCRIPTION

PINNING

SOT399

Combined damper and modulator

DESCRIPTION

diodes

in

an

isolated

plastic

envelope for horizontal deflection in

1

modulator anode.

colour TV and PC monitors.

The BYM359DX contains diodes

2

common anode/cathode

with performance characteristics

designed specifically for

3

damper cathode

applications from 16kHz to 56kHz

The BYM359DX series is supplied

in the conventional leaded SOT399

package.

LIMITING VALUES

T

j = 25 ˚C unless otherwise stated

DAMPER

MODULATOR

SYMBOL

PARAMETER

CONDITIONS

MIN

MAX

MIN

MAX

UNIT

V

RSM

Peak non-repetitive reverse

-

1500

-

800

V

voltage.

V

RRM

Peak repetitive reverse voltage

-

1500

-

600

V

RWM

Crest working reverse voltage

-

1300

-

600

V

I

F(AV)

Average forward current

sinusoidal;a=1.57

-

10

-

8

A

I

F(RMS)

RMS forward current

-

15.7

-

11.0

A

I

FRM

Peak repetitive forward current

t=25

µs δ= 0.5

-

20

-

16.0

A

T

hs ≤ 83 ˚C

I

FSM

Peak non-repetitive forward

t = 10ms

-

60

-

60

A

current

t = 8.3 ms

-

66

-

66

A

sinusoidal;

with reapplied

V

RWM(MAX)

T

stg

Storage temperature

-40

150

-40

150

˚C

T

J

Operating junction temperature

-

150

-

150

˚C

1

3

2

damper

modulator

case

12 3

March 2000

1

Rev 1.000

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BYM359DX Datasheet(PDF) 1 Page - NXP Semiconductors

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