BYQ30EX datasheet(2/6 Pages) PHILIPS

2 / 6 page

Philips Semiconductors

Product specification

Rectifier diodes

BYQ30EX series

ultrafast, rugged

ISOLATION LIMITING VALUE & CHARACTERISTIC

hs = 25 ˚C unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

isol

R.M.S. isolation voltage from all

f = 50-60 Hz; sinusoidal

2500

three terminals to external

waveform;

heatsink

R.H.

≤ 65% ; clean and dustfree

isol

Capacitance from T2 to external f = 1 MHz

heatsink

THERMAL RESISTANCES

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

th j-hs

Thermal resistance junction to

with heatsink compound

5.0

K/W

heatsink

without heatsink compound

7.0

K/W

th j-a

Thermal resistance junction to

in free air

K/W

ambient

ELECTRICAL CHARACTERISTICS

characteristics are per diode at T

j = 25 ˚C unless otherwise stated

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

Forward voltage

F = 8 A; Tj = 150˚C

0.83

0.95

F = 16 A; Tj = 150˚C

1.0

1.15

F = 16 A;

0.98

1.25

Reverse current

R = VRWM; Tj = 100 ˚C

0.3

0.6

R = VRWM

-2

µA

Reverse recovery charge

F = 2 A; VR ≥ 30 V; -dIF/dt = 20 A/µs-

Reverse recovery time

F = 1 A; VR ≥ 30 V;

-dI

F/dt = 100 A/µs

rrm

Peak reverse recovery current

F = 1 A; VR ≥ 30 V;

1.0

-dI

F/dt = 50 A/µs; Tj = 100 ˚C

Forward recovery voltage

F = 1 A; dIF/dt = 10 A/µs-

October 1998

Rev 1.200

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