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BYT79 Datasheet(PDF) 1 Page - NXP Semiconductors |
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BYT79 Datasheet(HTML) 1 Page - NXP Semiconductors |
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1 / 5 page ![]() Philips Semiconductors Product specification Rectifier diodes BYT79 series ultrafast FEATURES SYMBOL QUICK REFERENCE DATA • Low forward volt drop V R = 300 V/ 400 V/ 500 V • Fast switching • Soft recovery characteristic V F ≤ 1.05 V • High thermal cycling performance • Low thermal resistance I F(AV) = 14 A t rr ≤ 60 ns GENERAL DESCRIPTION PINNING SOD59 (TO220AC) Ultra-fast, epitaxial rectifier diodes PIN DESCRIPTION intended for use as output rectifiers in high frequency switched mode 1 cathode power supplies. 2 anode The BYT79 series is supplied in the conventional leaded SOD59 tab cathode (TO220AC) package. LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT BYT79 -300 -400 -500 V RRM Peak repetitive reverse voltage - 300 400 500 V V R Continuous reverse voltage T mb ≤ 147˚C - 300 400 500 V I F(AV) Average forward current 1 square wave; δ = 0.5; - 14 A T mb ≤ 117 ˚C I FSM Non-repetitive peak forward t = 10 ms - 130 A current. t = 8.3 ms - 143 A sinusoidal; with reapplied V RRM(max) T stg Storage temperature -40 150 ˚C T j Operating junction temperature - 150 ˚C THERMAL RESISTANCES SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT R th j-mb Thermal resistance junction to - - 2.0 K/W mounting base R th j-a Thermal resistance junction to in free air. - 60 - K/W ambient k a 12 1 tab 2 1 Neglecting switching and reverse current losses September 1998 1 Rev 1.300 |
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