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BYT79 Datasheet(PDF) 2 Page - NXP Semiconductors |
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BYT79 Datasheet(HTML) 2 Page - NXP Semiconductors |
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2 / 5 page ![]() Philips Semiconductors Product specification Rectifier diodes BYT79 series ultrafast ELECTRICAL CHARACTERISTICS T j = 25 ˚C unless otherwise stated SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V F Forward voltage I F = 15 A; Tj = 150˚C - 0.90 1.05 V I F = 30 A - 1.17 1.38 V I R Reverse current V R = VRRM - 5.0 50 µA V R = VRRM; Tj = 100 ˚C - 0.2 0.8 mA Q s Reverse recovery charge I F = 2 A to VR ≥ 30 V; - 50 60 nC dI F/dt = 20 A/µs t rr Reverse recovery time I F = 1 A to VR ≥ 30 V; - 50 60 ns dI F/dt = 100 A/µs I rrm Peak reverse recovery current I F = 10 A to VR ≥ 30 V; - 4.0 5.2 A dI F/dt = 50 A/µs; Tj = 100˚C V fr Forward recovery voltage I F = 10 A; dIF/dt = 10 A/µs - 2.5 - V Fig.1. Definition of t rr, Qs and Irrm Fig.2. Definition of V fr Fig.3. Maximum forward dissipation P F = f(IF(AV)); square wave where I F(AV) =IF(RMS) x √D. Fig.4. Maximum forward dissipation P F = f(IF(AV)); sinusoidal current waveform where a = form factor = I F(RMS) / IF(AV). Q s 100% 10% time dI dt F I R I F I rrm t rr 0 5 10 15 20 25 0 5 10 15 20 25 D = 1.0 0.5 0.2 0.1 BYT79 Rs = 0.0095 Ohms Vo = 0.9075 V IF(AV) / A PF / W Tmb(max) / C 150 140 130 120 110 100 D = tp tp T T t I time time V F V fr V F I F 0 5 10 15 0 5 10 15 20 1.9 4 BYT79 IF(AV) / A PF / W a = 1.57 2.2 2.8 Tmb(max) / C 150 140 130 120 110 Vo = 0.9075 V Rs = 0.0095 Ohms September 1998 2 Rev 1.300 |
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