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BYV10 Datasheet(PDF) 2 Page - NXP Semiconductors |
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BYV10 Datasheet(HTML) 2 Page - NXP Semiconductors |
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2 / 4 page ![]() 1996 May 13 2 Philips Semiconductors Product specification Schottky barrier diodes BYV10 series FEATURES • Low switching losses • Fast recovery time • Guard ring protected • Hermetically sealed leaded glass package. APPLICATIONS • Low power, switched-mode power supplies • Rectifying • Polarity protection. DESCRIPTION The BYV10-20 to BYV10-40 types are Schottky barrier diodes fabricated in planar technology, and encapsulated in SOD81 hermetically sealed glass packages incorporating ImplotecTM(1) technology. (1) Implotec is a trademark of Philips. Fig.1 Simplified outline (SOD81) and symbol. handbook, 4 columns a k MAM218 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). Note 1. Refer to SOD81 standard mounting conditions. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VRRM repetitive peak reverse voltage BYV10-20 − 20 V BYV10-30 − 30 V BYV10-40 − 40 V IF(AV) average forward current note 1 − 1A Tstg storage temperature −65 +150 °C Tj junction temperature − 125 °C |
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