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BYV10 Datasheet(PDF) 2 Page - NXP Semiconductors

Part # BYV10
Description  Schottky barrier diodes
PDF  4 Pages
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Manufacturer  PHILIPS [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

BYV10 Datasheet(HTML) 2 Page - NXP Semiconductors

  BYV10 Datasheet HTML 1Page - NXP Semiconductors BYV10 Datasheet HTML 2Page - NXP Semiconductors BYV10 Datasheet HTML 3Page - NXP Semiconductors BYV10 Datasheet HTML 4Page - NXP Semiconductors  
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1996 May 13
2
Philips Semiconductors
Product specification
Schottky barrier diodes
BYV10 series
FEATURES
• Low switching losses
• Fast recovery time
• Guard ring protected
• Hermetically sealed leaded glass
package.
APPLICATIONS
• Low power, switched-mode power
supplies
• Rectifying
• Polarity protection.
DESCRIPTION
The BYV10-20 to BYV10-40 types are Schottky barrier diodes fabricated in
planar technology, and encapsulated in SOD81 hermetically sealed glass
packages incorporating ImplotecTM(1) technology.
(1) Implotec is a trademark of Philips.
Fig.1 Simplified outline (SOD81) and symbol.
handbook, 4 columns
a
k
MAM218
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Refer to SOD81 standard mounting conditions.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VRRM
repetitive peak reverse voltage
BYV10-20
−
20
V
BYV10-30
−
30
V
BYV10-40
−
40
V
IF(AV)
average forward current
note 1
−
1A
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
−
125
°C



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