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BYV10 Datasheet(PDF) 3 Page - NXP Semiconductors |
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BYV10 Datasheet(HTML) 3 Page - NXP Semiconductors |
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3 / 4 page  1996 May 13 3 Philips Semiconductors Product specification Schottky barrier diodes BYV10 series ELECTRICAL CHARACTERISTICS Tamb =25 °C; unless otherwise specified. Note 1. Pulsed test: tp = 300 µs; δ = 0.02. THERMAL CHARACTERISTICS Note 1. Refer to SOD81 standard mounting conditions. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VF forward voltage IF = 0.1 A −− 390 mV IF =1A −− 550 mV IF =3A −− 850 mV IR reverse current VR =VRRMmax; note 1 −− 1 mA Cd diode capacitance VR = 0 V; f = 1 MHz − 220 − pF SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-a thermal resistance from junction to ambient note 1 100 K/W |
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