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ISG2004 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited

Part # ISG2004
Description  IGBT
PDF  3 Pages
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Manufacturer  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

ISG2004 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited

  ISG2004 Datasheet HTML 1Page - Inchange Semiconductor Company Limited ISG2004 Datasheet HTML 2Page - Inchange Semiconductor Company Limited ISG2004 Datasheet HTML 3Page - Inchange Semiconductor Company Limited  
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ISG2004
eq IXGH90N60B3
IGBT
www.iscsemi.com
2
ELECTRICAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
MIN
TYPE
MAX
UNIT
VCES
Collector-Emitter Breakdown Voltage VGE=0; IC= 0.25mA
600
--
--
V
VGE(TH)
Gate-Emitter Threshold Voltage
VGE= VCE; IC= 0.25mA
3.5
--
5.0
V
VCE(sat)
Collector-Emitter Saturation Voltage
IC= 90A; VCE= 15V,
TC=25℃
--
1.55
1.80
V
VCE(sat)
Collector-Emitter Saturation Voltage
IC= 90A; VCE= 15V,
TC=125℃
--
1.62
--
V
ICES
Zero Gate Voltage Collector Current
VCE=600V; VGE=0
--
--
75
uA
IGES
Gate-Emitter Leakage Current
VGE=±20V; VCE=0
--
--
±
100
nA
gts
Forward Transconductance
IC= 60A; VCE= 10V
--
95
--
S
Cies
Input Capacitance
VGS = 0V,
VCS = 25V,
f = 1.0MHz
--
8396
--
pF
Coes
Output Capacitance
--
578
--
Cres
Reverse Transfer Capacitance
--
150
--
Qg
Total Gate Charge
VGE = 15V,
IC= 90A,
VCE = 0.5VCES
--
180
--
nC
Qgs
Gate-Source Charge
--
30
--
Qgd
Gate-Drain Charge
--
69
--
td(on)
Turn-on Delay Time
VGE = 15V,
IC= 60A,
VCE = 480V,
RG=2Ω
TJ=25℃
--
35
--
ns
tr
Turn-on Rise Time
--
54
--
td(off)
Turn-off Delay Time
--
155
--
tf
Turn-off Fall Time
--
220
--
Eon
Turn-on switching losses
--
1.45
--
mJ
Eoff
Turn-off switching losses
--
2.1
--



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