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ISG2004 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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ISG2004 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 3 page ![]() ISG2004 eq IXGH90N60B3 IGBT www.iscsemi.com 1 DESCRIPTION · Low Saturation Voltage:VCE(sat)=1.8V@IC=40A · High Current Capability · High Power Density · Low Gate Drive Requirement APPLICATIONS · Synchronous Rectification in SMPS · Battey Chargers · UPS,PFC · Motor Drives ABSOLUTE MAXIMUM RATINGS SYMBOL PARAMETER VALUE UNIT VCES Collector-Emitter Voltage 600 V VGES Gate-Emitter Voltage ± 20 V IC Collector Current-Continuous @ TC=25℃ 75 A IC Collector Current-Continuous @ TC=110℃ 90 A ICM Pulsed Collector Current 500 A PD Power Dissipation , TC=25℃ 660 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 0.19 ℃ /W |
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