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ISB3010 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited

Part # ISB3010
Description  Silicon NPN Power Transistor
PDF  3 Pages
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Manufacturer  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

ISB3010 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited

  ISB3010 Datasheet HTML 1Page - Inchange Semiconductor Company Limited ISB3010 Datasheet HTML 2Page - Inchange Semiconductor Company Limited ISB3010 Datasheet HTML 3Page - Inchange Semiconductor Company Limited  
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ISB3010
eq ZTX689B
Silicon NPN Power Transistor
www.iscsemi.com
2023-9-20
2
ELECTRICAL CHARACTERISTICS （TC=25℃ unless otherwise specified）
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP
MAX
UNIT
V(BR)EBO
Emitter-Base Breakdown Voltage
IE= 100uA; IC= 0
5
--
--
V
V(BR)CEO
Collector-Emitter Breakdown Voltage
IC=10mA; IB= 0
20
--
--
V
V(BR)CBO
Collector-Base Breakdown Voltage
IC= 100uA; IE= 0
20
--
--
V
ICBO
Collector Cutoff Current
VCB = 16V; IE= 0
--
--
0.1
uA
IEBO
Emitter Cutoff Current
VEB =4V; IC= 0
--
--
0.1
uA
VCE(sat)
Collector-Emitter Saturation Voltage
IC= 0.1A; IB=0.5mA
--
--
0.1
V
VCE(sat)
Collector-Emitter Saturation Voltage
IC= 2A; IB= 10mA
--
--
0.5
V
VBE(sat)
Base -Emitter Saturation Voltage
IC= 1A; IB= 10mA
--
--
0.9
V
VBE(on)
Base-Emitter Turn-On Voltage
IC= 1A;VCE= 2V
--
--
0.9
V
hFE
DC Current Gain
IC= 0.1A; VCE=2V
500
--
--
hFE
DC Current Gain
IC= 2A; VCE= 2V
400
hFE
DC Current Gain
IC= 6A; VCE= 2V
150
--



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