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ISB3010 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

Part # ISB3010
Description  Silicon NPN Power Transistor
PDF  3 Pages
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Manufacturer  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

ISB3010 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited

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ISB3010
eq ZTX689B
Silicon NPN Power Transistor
www.iscsemi.com
2023-9-20
1
DESCRIPTION
·
Collector-Emitter Breakdown Voltage
-V(BR)CEO= 20V(Min)
·
Collector-Emitter Saturation Voltage
-VCE(sat)= 0.5V(Max) @IC=2A
APPLICATIONS
·
Designed for power amplifier,high speed switching and
regulated power supply applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
20
V
VCEO
Collector-Emitter Voltage
20
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
3
A
ICM
Peak Pulse Current
8
A
PC
Collector Power Dissipation
1.5
W
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature Range
-55~150
℃


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