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ISB3012 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited

Part # ISB3012
Description  Silicon PNP Power Transistor
PDF  3 Pages
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Manufacturer  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

ISB3012 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited

  ISB3012 Datasheet HTML 1Page - Inchange Semiconductor Company Limited ISB3012 Datasheet HTML 2Page - Inchange Semiconductor Company Limited ISB3012 Datasheet HTML 3Page - Inchange Semiconductor Company Limited  
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ISB3012
eq ZTX751
Silicon PNP Power Transistor
www.iscsemi.com
2023-9-20
2
ELECTRICAL CHARACTERISTICS （TC=25℃ unless otherwise specified）
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP
MAX
UNIT
V(BR)EBO
Emitter-Base Breakdown Voltage
IE= -100uA; IC= 0
-7
--
--
V
V(BR)CEO
Collector-Emitter Breakdown Voltage
IC=-10mA; IB= 0
-60
--
--
V
V(BR)CBO
Collector-Base Breakdown Voltage
IC= -100uA; IE= 0
-80
--
--
V
ICBO
Collector Cutoff Current
VCE = -60V; IE= 0
--
--
-0.1
uA
IEBO
Emitter Cutoff Current
VEB = -6V; IC= 0
--
--
-0.1
uA
VCE(sat)
Collector-Emitter Saturation Voltage
IC= -1A; IB= -100mA
--
--
-0.3
V
VCE(sat)
Collector-Emitter Saturation Voltage
IC= -2A; IB= -200mA
--
--
-0.5
V
VBE(sat)
Base -Emitter Saturation Voltage
IC= -1A; IB= -100mA
--
--
-1.25
V
VBE(on)
Base-Emitter Turn-On Voltage
IC= -1A;VCE= -2V
--
--
-1
V
hFE
DC Current Gain
IC= -50mA; VCE= -2V
70
200
--
hFE
DC Current Gain
IC= -500mA; VCE= -2V
100
200
300
hFE
DC Current Gain
IC= -1A; VCE= -2V
80
170
--
hFE
DC Current Gain
IC= -2A; VCE= -2V
40
80
--



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