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ISB3012 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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ISB3012 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 3 page  ISB3012 eq ZTX751 Silicon PNP Power Transistor www.iscsemi.com 2023-9-20 1 DESCRIPTION · Collector-Emitter Breakdown Voltage -V(BR)CEO= -60V(Min) · Collector-Emitter Saturation Voltage -VCE(sat)= -0.5V(Max) @IC=-2A APPLICATIONS · Designed for power amplifier,high speed switching and regulated power supply applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -7 V IC Collector Current-Continuous -2 A ICM Peak Pulse Current -6 A PC Collector Power Dissipation 1.5 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ |
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