AT45DB642D datasheet(33/55 Pages) ATMEL

33 / 55 page

3542F–DFLASH–09/06

AT45DB642D

18. Electrical Specifications

Notes:

1. AI

CC1 and ICC2 during a buffer read is 25 mA maximum.

2. All inputs are 5 volts tolerant.

Table 18-1.

Absolute Maximum Ratings*

Temperature under Bias ................................ -55

°C to +125°C

*NOTICE:

Stresses beyond those listed under “Absolute

Maximum Ratings” may cause permanent dam-

age to the device. This is a stress rating only and

functional operation of the device at these or any

other conditions beyond those indicated in the

operational sections of this specification is not

implied. Exposure to absolute maximum rating

conditions for extended periods may affect device

reliability.

Storage Temperature ..................................... -65

°C to +150°C

All Input Voltages (including NC Pins)

with Respect to Ground ...................................-0.6V to +6.25V

All Output Voltages

with Respect to Ground .............................-0.6V to VCC + 0.6V

Table 18-2.

DC and AC Operating Range

AT45DB642D

Operating Temperature (Case)

Ind.

-40

°C to 85°C

CC Power Supply

2.7V to 3.6V

Table 18-3.

DC Characteristics

Symbol

Parameter

Condition

Min

Typ

Max

Units

Deep Power-down Current

CS, RESET, WP = V

IH, all inputs at

CMOS levels

918

µA

Standby Current

CS, RESET, WP = V

IH, all inputs at

CMOS levels

µA

CC1

(1)

Active Current, Read Operation,

Serial Interface

f = 33 MHz; I

OUT = 0 mA;

CC = 3.6V

CC2

(1)

Active Current, Read Operation,

Rapid8 Interface

f = 33 MHz; I

OUT = 0 mA;

CC = 3.6V

CC3

Active Current, Program Operation,

Page Program

CC = 3.6V

CC4

Active Current, Page Erase, Block

Erase, Sector Erase Operation

CC = 3.6V

Input Load Current

IN = CMOS levels

µA

Output Leakage Current

I/O = CMOS levels

µA

Input Low Voltage

CC x 0.3

Input High Voltage

CC x 0.7

Output Low Voltage

OL = 1.6 mA; VCC = 2.7V

0.4

Output High Voltage

OH = -100 µA

CC - 0.2V

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