Philips Semiconductors

Product specification

82S191/82S191A

16K-bit TTL bipolar PROM (2048 x 8)

March 14, 1989

2

ORDERING INFORMATION

DESCRIPTION

ORDER CODE

24-Pin Plastic Dual-In-Line

600mil-wide

N82S191 N, N82S191A N

28-Pin Plastic Leaded Chip Carrier

450mil-square

N82S191 A, N82S191A A

ABSOLUTE MAXIMUM RATINGS

SYMBOL

PARAMETER

RATING

UNIT

VCC

Supply voltage

+7.0

VDC

VIN

Input voltage

+5.5

VDC

VO

Output voltage Off-State

+5.5

VDC

Tamb

Operating temperature range

0 to +75

°C

Tstg

Storage temperature range

–65 to +150

°C

DC ELECTRICAL CHARACTERISTICS

0

°C ≤ Tamb ≤ +75°C, 4.75V ≤ VCC ≤ 5.25V

SYMBOL

PARAMETER

TEST CONDITIONS1, 2

LIMITS

UNIT

MIN

TYP3

MAX

Input voltage

VIL

Low

0.8

V

VIH

High

2.0

V

VIC

Clamp

IIN = –12mA

–0.8

–1.2

V

Output voltage

CE1 = Low, CE2,3 = High

VOL

Low

IOUT = 9.6mA

0.45

V

VOH

High

IOUT = –2.0mA

2.4

V

Input current1

IIL

Low

VIN = 0.45V

–100

µA

IIH

High

VIN = 5.5V

40

µA

Output current1

IOZ

Hi-Z state

CE1 = High, CE2,3 = Low, VOUT = 0.5V

–40

µA

CE1 = High, CE2,3 = Low, VOUT = 5.5V

40

µA

IOS

Short circuit (82S123A)4

CE1 = Low, CE2,3 = High, VOUT = 0V

–15

–70

mA

Supply current5

ICC

VCC = 5.25V

130

175

mA

Capacitance

CE1 = High, CE2,3 = Low, VCC = 5.0V

CIN

Input

VIN = 2.0V

5

pF

COUT

Output

VOUT = 2.0V

8

pF

NOTES:

1. Positive current is defined as into the terminal referenced.

2. All voltages with respect to network ground terminal.

3. Typical values are at VCC = 5V, Tamb = +25°C.

4. Duration of short circuit should not exceed 1 second.

5. Measured with all inputs grounded and all outputs open.