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BYM600A170DN2 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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BYM600A170DN2 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 3 page ![]() ISUM6009 eq BYM600A170DN2 Diode Power Module www.iscsemi.com 1 DESCRIPTION · Inside fast free-wheeling diode · Diode especially for brake choppers · Package with insulated metal base plate ABSOLUTE MAXIMUM RATINGS SYMBOL PARAMETER VALUE UNIT VR Diode reverse voltage,TJ=25℃ 300 V IF DC current,TC=25℃ 600 A DC current,TC=80℃ 400 IFpuls Pulsed diode current, tp = 1 ms TC=25℃ 1200 A TC=80℃ 800 I2t I2t for fusing, tp = 1 ms ,TJ=0℃ 96.8 A2S*103 PD Power dissipation per diode,TC=25℃ 1400 W TJ Junction Temperature -55~175 ℃ Tstg Storage Temperature Range -55~175 ℃ Visol Insulation test voltage, t = 1min 4000 V THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 0.09 ℃ /W |
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