NJ32 datasheet(3/3 Pages) INTERFET

3 / 3 page

F-20

01/99

PJ32 Process

Silicon Junction Field-Effect Transistor

¥ General Purpose Amplifier

Absolute maximum ratings at TA = 25¡C

Gate Current, Ig

10 mA

Operating Junction Temperature, Tj

+150°C

Storage Temperature, Ts

– 65°C to +175°C

Devices in this Databook based on the PJ32 Process.

Datasheet

2N5020, 2N5021

2N5460, 2N5461

2N5462

At 25°C free air temperature:

PJ32 Process

Static Electrical Characteristics

Min

Typ

Max

Unit

Test Conditions

Gate Source Breakdown Voltage

V(BR)GSS

IG = 1 µA, VDS = Ø

Reverse Gate Leakage Current

IGSS

VGS = 15V, VDS = Ø

Drain Saturation Current (Pulsed)

IDSS

– 1

– 15

VDS = – 15V, VGS = Ø

Gate Source Cutoff Voltage

VGS(OFF)

0.5

VDS = – 15V, ID = 1 nA

Dynamic Electrical Characteristics

Forward Transconductance

gfs

2.5

VDS = – 15V, VGS = Ø

f = 1 kHz

Input Capacitance

Ciss

3.2

VDS = Ø, VGS = 10

f = 1 MHz

Feedback Capacitance

Crss

1.7

VDS = Ø, VGS = 10

f = 1 MHz

Equivalent Noise Voltage

¯eN

nV/

√HZ V

DS = 10 V, VGS = Ø

f = 1 Hz

1000 N. Shiloh Road, Garland, TX 75042

(972) 487-1287 FAX (972) 276-3375

www.interfet.com

S-D

Die Size = 0.018" X 0.018"

All Bond Pads = 0.004" Sq.

Substrate is also Gate.

Databook.fxp

1/13/99 2:09 PM

Page F-20

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