NJ32 datasheet(1/3 Pages) INTERFET

Part #	NJ32

Description	Silicon Junction Field-Effect Transistor General Purpose Amplifier

PDF	3 Pages

Scroll/Zoom	100%

Manufacturer	INTERFET [InterFET Corporation]

Direct Link	http://www.interfet.com

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1 / 3 page

F-18

01/99

NJ32 Process

Silicon Junction Field-Effect Transistor

¥ General Purpose Amplifier

Absolute maximum ratings at TA = 25¡C

Gate Current, Ig

10 mA

Operating Junction Temperature, Tj

+150°C

Storage Temperature, Ts

– 65°C to +175°C

Devices in this Databook based on the NJ32 Process.

Datasheet

2N3821, 2N3822

2N3823, 2N3824

2N4222, 2N4222A

At 25°C free air temperature:

NJ32 Process

Static Electrical Characteristics

Min

Typ

Max

Unit

Test Conditions

Gate Source Breakdown Voltage

V(BR)GSS

– 25

– 50

V

IG = – 1 µA, VDS = ØV

Reverse Gate Leakage Current

IGSS

– 10

– 100

pA

VGS = – 15V, VDS = ØV

Drain Saturation Current (Pulsed)

IDSS

122

mA

VDS = 15V, VGS = ØV

Gate Source Cutoff Voltage

VGS(OFF)

– 0.5

– 6

V

VDS = 15V, ID = 1 nA

Dynamic Electrical Characteristics

Forward Transconductance

gfs

4mS

VDS = 15V, VGS = ØV

f = 1 kHz

Input Capacitance

Ciss

6

7.0

pF

VDS = 15V, VGS = ØV

f = 1 MHz

Feedback Capacitance

Crss

1.3

3

pF

VDS = 15V, VGS = ØV

f = 1 MHz

Equivalent Noise Voltage

¯eN

7

nV/

√HZ V

DS = 10 V, ID = 5 mA

f = 1 kHz

1000 N. Shiloh Road, Garland, TX 75042

(972) 487-1287 FAX (972) 276-3375

www.interfet.com

G

S-D

Die Size = 0.018" X 0.018"

All Bond Pads = 0.004" Sq.

Substrate is also Gate.

Databook.fxp

1/13/99 2:09 PM

Page F-18

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