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ISG2027 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited

Part # ISG2027
Description  IGBT with fast recovery diode
PDF  4 Pages
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Manufacturer  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

ISG2027 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited

  ISG2027 Datasheet HTML 1Page - Inchange Semiconductor Company Limited ISG2027 Datasheet HTML 2Page - Inchange Semiconductor Company Limited ISG2027 Datasheet HTML 3Page - Inchange Semiconductor Company Limited ISG2027 Datasheet HTML 4Page - Inchange Semiconductor Company Limited  
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ISG2027
eq AOB15B65M1
IGBT with fast recovery diode
www.iscsemi.com
2
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance,Junction to Case IGBT
0.7
℃
/W
Rth j-c
Thermal Resistance,Junction to Case Diode
1.9
℃
/W
ELECTRICAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
MIN
TYPE
MAX
UNIT
VCES
Collector-Emitter Breakdown Voltage VGE=0; IC= 1mA
650
--
--
V
VGE(TH)
Gate-Emitter Threshold Voltage
VGE= 5V; IC= 1mA
--
5.2
--
V
VCE(sat)
Collector-Emitter Saturation Voltage
IC= 15A; VCE= 15V,
TJ= 25℃
--
1.7
--
V
VCE(sat)
Collector-Emitter Saturation Voltage
IC= 15A; VCE= 15V,
TJ=125℃
--
2.04
2.0
V
VCE(sat)
Collector-Emitter Saturation Voltage
IC= 15A; VCE= 15V,
TJ=175℃
--
2.23
--
V
ICES
Zero Gate Voltage Collector Current
VCE=650V; VGE=0
TJ= 25℃
--
--
10
uA
ICES
Zero Gate Voltage Collector Current
VCE=650V; VGE=0
TJ= 125℃
--
--
500
uA
ICES
Zero Gate Voltage Collector Current
VCE=650V; VGE=0
TJ= 175℃
--
--
5000
uA
IGES
Gate-Emitter Leakage Current
VGE=±30V; VCE=0
--
--
±
100
nA
Cies
Input Capacitance
VGS = 0V,
VCS = 25V,
f = 1.0MHz
--
940
--
pF
Coes
Output Capacitance
--
102
--
Cres
Reverse Transfer Capacitance
--
34
--
Qg
Total Gate Charge
VGE = 15V,
IC= 30A,
VCE = 520V
--
33
--
nC
Qgs
Gate-Source Charge
--
7.9
--
Qgd
Gate-Drain Charge
--
16
--



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