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NJ3600L Datasheet(PDF) 1 Page - InterFET Corporation |
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NJ3600L Datasheet(HTML) 1 Page - InterFET Corporation |
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1 / 2 page  F-48 01/99 NJ3600L Process Silicon Junction Field-Effect Transistor ¥ Large Capacitance Detector Pre-Amplifier Absolute maximum ratings at TA = 25¡C Gate Current, Ig 10 mA Operating Junction Temperature, Tj +150°C Storage Temperature, Ts – 65°C to +175°C Device in this Databook based on the NJ3600L Process. Datasheet IF3601 IF3602 At 25°C free air temperature: NJ3600L Process Static Electrical Characteristics Min Typ Max Unit Test Conditions Gate Source Breakdown Voltage V(BR)GSS – 15 – 22 V IG = 1 µA, VDS = ØV Reverse Gate Leakage Current IGSS 100 1000 pA VGS = 10V, VDS = ØV Drain Saturation Current (Pulsed) IDSS 50 1000 mA VDS = 10V, VGS = ØV Gate Source Cutoff Voltage VGS(OFF) – 0.5 – 3 V VDS = 10V, ID = 1 nA Dynamic Electrical Characteristics Drain Source ON Resistance rds(on) 14 Ω ID = 1 mA, VGS = ØV f = 1 kHz Forward Transconductance (Pulsed) gfs 750 mS VDS = 10V, VGS = ØV f = 1 kHz Input Capacitance Ciss 650 pF VDS = 10V, VGS = ØV f = 1 kHz Feedback Capacitance Crss 80 pF VDS = 10V, VGS = ØV f = 1 kHz Equivalent Noise Voltage ¯eN 0.35 nV/ √HZ V DG = 3V, ID = 5 mA f = 30 Hz 1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375 www.interfet.com G S-D S-D G D-S D-S S-D D-S Die Size = 0.074" X 0.074" All Bond Pads ≥ 0.004" Sq. Substrate is also Gate. Databook.fxp 1/13/99 2:09 PM Page F-48 |
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