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HEF4720VT Datasheet(PDF) 4 Page - NXP Semiconductors

Part # HEF4720VT
Description  256-bit, 1-bit per word random access memories
PDF  16 Pages
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Manufacturer  PHILIPS [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

HEF4720VT Datasheet(HTML) 4 Page - NXP Semiconductors

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January 1995
4
Philips Semiconductors
Product specification
256-bit, 1-bit per word random access memories
HEF4720B
HEF4720V
AC CHARACTERISTICS
A.C. CHARACTERISTICS
VSS = 0 V; Tamb =25 °C; CL = 50 pF; input transition times ≤ 20 ns
VDD
V
SYMBOL
MIN.
TYP.
MAX.
55
pF
Output capacitance
10
CO
5pF
15
5
pF
VDD
V
SYMBOL
MIN.
TYP.
MAX.
TYPICAL EXTRAPOLATION
FORMULA
Read cycle
5
320
580
ns
292 ns
+ (0,55 ns/pF) C
L
Read access time
10
tACC
130
220
ns
118 ns
+ (0,23 ns/pF) CL
15
100
160
ns
92 ns
+ (0,16 ns/pF) CL
Chip select to
5
180
ns
output time
10
tCO
70
ns
15
50
ns
50
ns
Address hold time
10
tOA
0ns
15
0
ns
Output hold time
5
60
170
ns
142 ns
+ (0,55 ns/pF) CL
with respect to
10
tVAL1
20
50
ns
38 ns
+ (0,23 ns/pF) CL
address input
15
15
40
ns
32 ns
+ (0,16 ns/pF) CL
Output hold time
5
130
ns
with respect to
10
tCOH
70
ns
chip select input
15
60
ns
Output floating time
5
0
ns
with respect to
10
tCOF
0ns
chip select input
15
0
ns
5
580
ns
Read cycle time
10
tRC
220
ns
15
160
ns
Output transition
5
60
120
ns
10 ns
+ (1,0 ns/pF) CL
times
10
tTLH
30
60
ns
9 ns
+ (0,42 ns/pF) CL
LOW to HIGH
15
20
40
ns
6 ns
+ (0,28 ns/pF) CL
540
80
ns
14 ns
+ (0,52 ns/pF) CL
HIGH to LOW
10
tTHL
22
40
ns
11 ns
+ (0,22 ns/pF) CL
15
15
30
ns
7 ns
+ (0,16 ns/pF) CL



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