Philips Semiconductors

Product specification

PowerMOS transistor

IRF730

Avalanche energy rated

FEATURES

SYMBOL

QUICK REFERENCE DATA

• Repetitive Avalanche Rated

• Fast switching

V

• High thermal cycling performance

• Low thermal resistance

I

R

GENERAL DESCRIPTION

PINNING

SOT78 (TO220AB)

N-channel,

enhancement

mode

PIN

DESCRIPTION

field-effect

power

transistor,

intended for use in off-line switched

1

gate

mode power supplies, T.V. and

computer monitor power supplies,

2

drain

d.c. to d.c. converters, motor control

circuits

and

general

purpose

3

source

switching applications.

tab

drain

The IRF730 is supplied in the

SOT78 (TO220AB) conventional

leaded package.

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134)

SYMBOL PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

V

DSS

Drain-source voltage

T

-

400

V

V

DGR

Drain-gate voltage

T

-

400

V

V

GS

Gate-source voltage

-

± 30

V

I

D

Continuous drain current

T

25 ˚C; V

-

7.2

A

T

-

4.6

A

I

DM

Pulsed drain current

T

-

29

A

P

D

Total dissipation

T

-

125

W

T

Operating junction and

- 55

150

˚C

storage temperature range

AVALANCHE ENERGY LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134)

SYMBOL PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

E

AS

Non-repetitive avalanche

Unclamped inductive load, I

-

290

mJ

energy

t

V

to fig:17

E

AR

Repetitive avalanche energy

1

I

-

9.4

mJ

avalanche = 25˚C; R

refer to fig:18

I

Repetitive and non-repetitive

-

7.2

A

avalanche current

d

g

s

12 3

tab

1 pulse width and repetition rate limited by T

March 1999

1

Rev 1.000