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IRF730 Datasheet(PDF) 2 Page - NXP Semiconductors

Part # IRF730
Description  PowerMOS transistor Avalanche energy rated
PDF  7 Pages
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Manufacturer  PHILIPS [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

IRF730 Datasheet(HTML) 2 Page - NXP Semiconductors

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Philips Semiconductors
Product specification
PowerMOS transistor
IRF730
Avalanche energy rated
THERMAL RESISTANCES
SYMBOL PARAMETER
CONDITIONS
MIN.
TYP. MAX. UNIT
R
th j-mb
Thermal resistance junction
-
-
1
K/W
to mounting base
R
th j-a
Thermal resistance junction
in free air
-
60
-
K/W
to ambient
ELECTRICAL CHARACTERISTICS
T
j = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
MIN.
TYP. MAX. UNIT
V
(BR)DSS
Drain-source breakdown
V
GS = 0 V; ID = 0.25 mA
400
-
-
V
voltage
∆V
(BR)DSS / Drain-source breakdown
V
DS = VGS; ID = 0.25 mA
-
0.1
-
%/K
∆T
j
voltage temperature
coefficient
R
DS(ON)
Drain-source on resistance
V
GS = 10 V; ID = 3.6 A
-
0.7
1
Ω
V
GS(TO)
Gate threshold voltage
V
DS = VGS; ID = 0.25 mA
2.0
3.0
4.0
V
g
fs
Forward transconductance
V
DS = 30 V; ID = 3.6 A
2
4
-
S
I
DSS
Drain-source leakage current V
DS = 400 V; VGS = 0 V
-
1
25
µA
V
DS = 320 V; VGS = 0 V; Tj = 125 ˚C
-
30
250
µA
I
GSS
Gate-source leakage current V
GS = ±30 V; VDS = 0 V
-
10
200
nA
Q
g(tot)
Total gate charge
I
D = 7.2 A; VDD = 320 V; VGS = 10 V
-
52
62
nC
Q
gs
Gate-source charge
-
3
5
nC
Q
gd
Gate-drain (Miller) charge
-
26
30
nC
t
d(on)
Turn-on delay time
V
DD = 200 V; RD = 27 Ω;
-
12
-
ns
t
r
Turn-on rise time
R
G = 12 Ω
-33
-
ns
t
d(off)
Turn-off delay time
-
93
-
ns
t
f
Turn-off fall time
-
42
-
ns
L
d
Internal drain inductance
Measured from tab to centre of die
-
3.5
-
nH
L
d
Internal drain inductance
Measured from drain lead to centre of die
-
4.5
-
nH
L
s
Internal source inductance
Measured from source lead to source
-
7.5
-
nH
bond pad
C
iss
Input capacitance
V
GS = 0 V; VDS = 25 V; f = 1 MHz
-
620
-
pF
C
oss
Output capacitance
-
108
-
pF
C
rss
Feedback capacitance
-
63
-
pF
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
T
j = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
MIN.
TYP. MAX. UNIT
I
S
Continuous source current
T
mb = 25˚C
-
-
7.2
A
(body diode)
I
SM
Pulsed source current (body
T
mb = 25˚C
-
-
29
A
diode)
V
SD
Diode forward voltage
I
S = 7.2 A; VGS = 0 V
-
-
1.2
V
t
rr
Reverse recovery time
I
S = 7.2 A; VGS = 0 V; dI/dt = 100 A/µs
-
270
-
ns
Q
rr
Reverse recovery charge
-
3.3
-
µC
March 1999
2
Rev 1.000



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