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IRLZ34 Datasheet(PDF) 2 Page - NXP Semiconductors

Part # IRLZ34
Description  N-channel enhancement mode Logic level TrenchMOS transistor
PDF  7 Pages
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Manufacturer  PHILIPS [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

IRLZ34 Datasheet(HTML) 2 Page - NXP Semiconductors

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Philips Semiconductors
Product specification
N-channel enhancement mode
IRLZ34N
Logic level TrenchMOS
TM transistor
ELECTRICAL CHARACTERISTICS
T
j= 25˚C
unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
MIN.
TYP. MAX. UNIT
V
(BR)DSS
Drain-source breakdown
V
GS = 0 V; ID = 0.25 mA;
55
-
-
V
voltage
T
j = -55˚C
50
-
-
V
V
(BR)GSS
Gate-source breakdown
I
G = ±1 mA;
10
-
-
V
voltage
V
GS(TO)
Gate threshold voltage
V
DS = VGS; ID = 1 mA
1.0
1.5
2.0
V
T
j = 175˚C
0.5
-
-
V
T
j = -55˚C
-
-
2.3
V
R
DS(ON)
Drain-source on-state
V
GS = 5 V; ID = 17 A
-
28
46
m
Ω
resistance
V
GS = 10 V; ID = 17 A
-
26
35
m
Ω
T
j = 175˚C
-
-
74
m
Ω
g
fs
Forward transconductance
V
DS = 25 V; ID = 15 A
12
40
-
S
I
GSS
Gate source leakage current V
GS = ±5 V; VDS = 0 V
-
0.02
1
µA
T
j = 175˚C
-
-
20
µA
I
DSS
Zero gate voltage drain
V
DS = 55 V; VGS = 0 V;
-
0.05
10
µA
current
T
j = 175˚C
-
-
500
µA
Q
g(tot)
Total gate charge
I
D = 30 A; VDD = 44 V; VGS = 5 V
-
22.5
-
nC
Q
gs
Gate-source charge
-
6
-
nC
Q
gd
Gate-drain (Miller) charge
-
11
-
nC
t
d on
Turn-on delay time
V
DD = 30 V; ID = 25 A;
-
14
21
ns
t
r
Turn-on rise time
V
GS = 5 V; RG = 10 Ω
-
77
110
ns
t
d off
Turn-off delay time
Resistive load
-
55
80
ns
t
f
Turn-off fall time
-
48
65
ns
L
d
Internal drain inductance
Measured from tab to centre of die
-
3.5
-
nH
L
d
Internal drain inductance
Measured from drain lead to centre of die
-
4.5
-
nH
(SOT78 package only)
L
s
Internal source inductance
Measured from source lead to source
-
7.5
-
nH
bond pad
C
iss
Input capacitance
V
GS = 0 V; VDS = 25 V; f = 1 MHz
-
1050
1400
pF
C
oss
Output capacitance
-
205
245
pF
C
rss
Feedback capacitance
-
113
150
pF
REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS
T
j = 25˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
MIN.
TYP. MAX. UNIT
I
S
Continuous source current
-
-
30
A
(body diode)
I
SM
Pulsed source current (body
-
-
110
A
diode)
V
SD
Diode forward voltage
I
F = 25 A; VGS = 0 V
-
0.95
1.2
V
I
F = 34 A; VGS = 0 V
-
1.0
-
V
t
rr
Reverse recovery time
I
F = 34 A; -dIF/dt = 100 A/µs;
-
40
-
ns
Q
rr
Reverse recovery charge
V
GS = -10 V; VR = 30 V
-
0.16
-
µC
February 1999
2
Rev 1.000



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